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BAS516,L3F

  • BAS516,L3F
  • BAS516,L3F

BAS516,L3F

BAS516,L3F

Toshiba Semiconductor and Storage

DIODE GEN PURP 100V 250MA ESC

SOT-23

BAS516,L3F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-79, SOD-523
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 200nA @ 80V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Operating Temperature - Junction 150°C Max
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 250mA
Reverse Recovery Time 3ns
Capacitance @ Vr, F 0.35pF @ 0V 1MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.158000 $0.158
10 $0.149057 $1.49057
100 $0.140619 $14.0619
500 $0.132660 $66.33
1000 $0.125151 $125.151

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