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CMF04(TE12L,Q,M)

CMF04(TE12L,Q,M)

CMF04(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE GEN PURP 800V 500MA MFLAT

SOT-23

CMF04(TE12L,Q,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-128
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Base Part Number CMF04
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 50μA @ 800V
Voltage - Forward (Vf) (Max) @ If 2.5V @ 500mA
Forward Current 500mA
Operating Temperature - Junction -40°C~150°C
Max Reverse Voltage (DC) 800V
Average Rectified Current 500mA
Reverse Recovery Time 100 ns
Peak Reverse Current 50μA
Max Repetitive Reverse Voltage (Vrrm) 800V
Peak Non-Repetitive Surge Current 10A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.442000 $0.442
10 $0.416981 $4.16981
100 $0.393378 $39.3378
500 $0.371112 $185.556
1000 $0.350105 $350.105

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