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CRH01(TE85L,Q,M)

CRH01(TE85L,Q,M)

CRH01(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 1A SFLAT

SOT-23

CRH01(TE85L,Q,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123F
Number of Pins 2
Diode Element Material SILICON
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
HTS Code 8541.10.00.80
Terminal Position DUAL
Terminal Form FLAT
Base Part Number CRH01
Pin Count 2
Number of Elements 1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 200V
Voltage - Forward (Vf) (Max) @ If 980mV @ 1A
Forward Current 1A
Operating Temperature - Junction -40°C~150°C
Max Surge Current 15A
Output Current-Max 1A
Forward Voltage 980mV
Max Reverse Voltage (DC) 200V
Average Rectified Current 1A
Reverse Recovery Time 35 ns
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 200V
Peak Non-Repetitive Surge Current 15A
Reverse Voltage 200V
Recovery Time 35 ns
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.615212 $0.615212
10 $0.580388 $5.80388
100 $0.547536 $54.7536
500 $0.516544 $258.272
1000 $0.487305 $487.305

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