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CUHS20S30,H3F

  • CUHS20S30,H3F
  • CUHS20S30,H3F

CUHS20S30,H3F

CUHS20S30,H3F

Toshiba Semiconductor and Storage

Schottky Barrier Diode, Low Vf,

SOT-23

CUHS20S30,H3F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 2-SMD, Flat Lead
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 500μA @ 30V
Voltage - Forward (Vf) (Max) @ If 410mV @ 2A
Operating Temperature - Junction 150°C Max
Voltage - DC Reverse (Vr) (Max) 30V
Current - Average Rectified (Io) 2A
Capacitance @ Vr, F 390pF @ 0V 1MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.40000 $0.4
500 $0.396 $198
1000 $0.392 $392
1500 $0.388 $582
2000 $0.384 $768
2500 $0.38 $950

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