HN1A01F-Y(TE85L,F)

new-10%

Manufacturer part number:HN1A01F-Y(TE85L,F)

Manufacturer:Toshiba Semiconductor and Storage

Description:Trans GP BJT PNP 50V 0.15A 6-Pin US T/R

Case Package:SOT-23

Datasheet:HN1A01F-Y(TE85L,F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Number of Pins	6
Operating Temperature	125°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	300mW
Frequency	80MHz
Number of Elements	2
Polarity	PNP
Element Configuration	Dual
Power Dissipation	300mW
Gain Bandwidth Product	80MHz
Transistor Type	2 PNP (Dual)
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	150mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA 6V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage	50V
Collector Emitter Saturation Voltage	100mV
Max Breakdown Voltage	50V
Collector Base Voltage (VCBO)	50V
Emitter Base Voltage (VEBO)	5V
hFE Min	120
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free