HN1A01FE-Y,LF

new-10%

Manufacturer part number:HN1A01FE-Y,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:Trans GP BJT PNP 50V 0.15A 6-Pin ES Embossed T/R

Case Package:SOT-23

Datasheet:HN1A01FE-Y,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Supplier Device Package	ES6
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	100mW
Polarity	PNP
Power - Max	100mW
Gain Bandwidth Product	80MHz
Transistor Type	2 PNP (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	150mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA 6V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage	50V
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	150mA
Collector Emitter Saturation Voltage	-100mV
Max Breakdown Voltage	50V
Frequency - Transition	80MHz
Collector Base Voltage (VCBO)	-50V
Emitter Base Voltage (VEBO)	-5V
hFE Min	120
Continuous Collector Current	-150mA
Height	550μm
Length	1.6mm
Width	1.2mm
RoHS Status	RoHS Compliant