HN1B01FU-GR,LF

new-10%

Manufacturer part number:HN1B01FU-GR,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:Trans GP BJT NPN/PNP 50V 0.15A 6-Pin US Embossed T/R

Case Package:SOT-23

Datasheet:HN1B01FU-GR,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Supplier Device Package	US6
Operating Temperature	125°C TJ
Packaging	Cut Tape (CT)
Published	2014
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	125°C
Min Operating Temperature	-55°C
Max Power Dissipation	210mW
Power - Max	200mW 210mW
Transistor Type	NPN, PNP
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	150mA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA 6V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage	50V
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	150mA
Max Breakdown Voltage	50V
Frequency - Transition	150MHz
Radiation Hardening	No
RoHS Status	RoHS Compliant