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HN1B01FU-Y(L,F,T)

HN1B01FU-Y(L,F,T)

HN1B01FU-Y(L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A US6

SOT-23

HN1B01FU-Y(L,F,T) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Power - Max 200mW
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Max Breakdown Voltage 50V
Frequency - Transition 120MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.067456 $0.067456
500 $0.049600 $24.8
1000 $0.041333 $41.333
2000 $0.037920 $75.84
5000 $0.035440 $177.2
10000 $0.032967 $329.67
15000 $0.031883 $478.245
50000 $0.031350 $1567.5

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