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HN1B04FE-GR,LF

HN1B04FE-GR,LF

HN1B04FE-GR,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A ES6

SOT-23

HN1B04FE-GR,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Power - Max 100mW
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 80MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.05313 $0.21252
8,000 $0.04620 $0.3696
12,000 $0.03927 $0.47124
28,000 $0.03696 $1.03488
100,000 $0.03080 $3.08

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