HN1B04FE-Y,LF

new-10%

Manufacturer part number:HN1B04FE-Y,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:TRANS NPN/PNP 50V 0.15A ES6

Case Package:SOT-23

Datasheet:HN1B04FE-Y,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Max Power Dissipation	100mW
Terminal Position	DUAL
Terminal Form	FLAT
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS
Power - Max	100mW
Transistor Application	AMPLIFIER
Polarity/Channel Type	NPN AND PNP
Transistor Type	NPN, PNP
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	150mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA 6V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	80MHz
Max Breakdown Voltage	50V
Frequency - Transition	80MHz
RoHS Status	RoHS Compliant