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HN1B04FU-Y,LF

  • HN1B04FU-Y,LF
  • HN1B04FU-Y,LF

HN1B04FU-Y,LF

HN1B04FU-Y,LF

Toshiba Semiconductor and Storage

Trans Gp Bjt Npn/pnp 50V 0.15A 200MW 6-PIN Us T/r

SOT-23

HN1B04FU-Y,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type NPN, PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 150MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.244000 $0.244
10 $0.230189 $2.30189
100 $0.217159 $21.7159
500 $0.204867 $102.4335
1000 $0.193271 $193.271

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