HN1D02FU,LF datasheet pdf and Diodes - Rectifiers - Arrays product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
HN1D02FU,LF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Supplier Device Package
US6
Packaging
Cut Tape (CT)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
200mW
Base Part Number
HN1D02
Element Configuration
Common Cathode
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Standard
Current - Reverse Leakage @ Vr
500nA @ 80V
Voltage - Forward (Vf) (Max) @ If
1.2V @ 100mA
Forward Current
300mA
Operating Temperature - Junction
125°C Max
Max Surge Current
2A
Voltage - DC Reverse (Vr) (Max)
80V
Current - Average Rectified (Io)
100mA
Forward Voltage
600mV
Max Reverse Voltage (DC)
80V
Average Rectified Current
100mA
Reverse Recovery Time
4 ns
Diode Configuration
2 Pair Common Cathode
Reverse Voltage (DC)
80V
Height
900μm
Length
2mm
Width
1.25mm
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.365000
$0.365
10
$0.344340
$3.4434
100
$0.324849
$32.4849
500
$0.306461
$153.2305
1000
$0.289114
$289.114
HN1D02FU,LF Product Details
HN1D02FU,LF Overview
In operation, this device will be set to 600mV volts forward.A surge current should be monitored and should not exceed 2A.A forward voltage of 300mA will enable the device to operate.A device like this produces the most 200mW heat (energy loss or waste).
HN1D02FU,LF Features
600mV forward voltage
HN1D02FU,LF Applications
There are a lot of Toshiba Semiconductor and Storage HN1D02FU,LF applications of rectifier diode array.