HN1D03FTE85LF datasheet pdf and Diodes - Rectifiers - Arrays product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
HN1D03FTE85LF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Packaging
Cut Tape (CT)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
Subcategory
Rectifier Diodes
Max Power Dissipation
300mW
Reach Compliance Code
unknown
Element Configuration
Dual
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Standard
Current - Reverse Leakage @ Vr
500nA @ 80V
Voltage - Forward (Vf) (Max) @ If
1.2V @ 100mA
Max Reverse Leakage Current
500nA
Operating Temperature - Junction
125°C Max
Max Surge Current
2A
Max Reverse Voltage (DC)
80V
Average Rectified Current
100mA
Reverse Recovery Time
4 ns
Diode Configuration
2 Pair CA + CC
Recovery Time
1.6 ns
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
HN1D03FTE85LF Product Details
HN1D03FTE85LF Overview
In order to prevent the surge current from exceeding 2A, it should be monitored.Its maximal reverse leakage current is 500nA, which is the current from that semiconductor device when the device is reverse biased.300mW heat is generated at the highest rate from this electronic or electrical device (energy waste).
HN1D03FTE85LF Features
HN1D03FTE85LF Applications
There are a lot of Toshiba Semiconductor and Storage HN1D03FTE85LF applications of rectifier diode array.