HN2D01FTE85LF

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Manufacturer part number:HN2D01FTE85LF

Manufacturer:Toshiba Semiconductor and Storage

Description:HN2D01FTE85LF datasheet pdf and Diodes - Rectifiers - Arrays product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:HN2D01FTE85LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Packaging	Cut Tape (CT)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Other Diodes
Max Power Dissipation	300mW
Operating Temperature (Max)	125°C
Speed	Small Signal =< 200mA (Io), Any Speed
Diode Type	Standard
Current - Reverse Leakage @ Vr	500nA @ 80V
Voltage - Forward (Vf) (Max) @ If	1.2V @ 100mA
Forward Current	80mA
Operating Temperature - Junction	125°C Max
Max Surge Current	1A
Max Reverse Voltage (DC)	80V
Average Rectified Current	80mA
Reverse Recovery Time	4 ns
Diode Configuration	3 Independent
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price

HN2D01FTE85LF Overview

Array should be a rule to monArrayor the surge current and not allow Array to exceed 1A.When the forward voltage is set to 80mA, this device will operate.300mW heat is generated at the highest rate from this electronic or electrical device (energy waste).