HN2D01JE(TE85L,F) datasheet pdf and Diodes - Rectifiers - Arrays product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
HN2D01JE(TE85L,F) Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-553
Packaging
Cut Tape (CT)
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Diodes
Max Power Dissipation
100mW
Operating Temperature (Max)
150°C
Element Configuration
Dual
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Standard
Current - Reverse Leakage @ Vr
500nA @ 80V
Voltage - Forward (Vf) (Max) @ If
1.2V @ 100mA
Forward Current
100mA
Operating Temperature - Junction
150°C Max
Max Surge Current
1A
Max Reverse Voltage (DC)
80V
Average Rectified Current
100mA
Reverse Recovery Time
1.6 ns
Diode Configuration
2 Independent
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.266844
$0.266844
10
$0.251740
$2.5174
100
$0.237490
$23.749
500
$0.224047
$112.0235
1000
$0.211365
$211.365
HN2D01JE(TE85L,F) Product Details
HN2D01JE(TE85L,F) Overview
Monarrayoring the surge current and preventing array from exceeding 1A should be the rule.There will be no operation of this device when the forward voltage is set to 100mA.A device like this produces the most 100mW heat (energy loss or waste).
HN2D01JE(TE85L,F) Features
HN2D01JE(TE85L,F) Applications
There are a lot of Toshiba Semiconductor and Storage HN2D01JE(TE85L,F) applications of rectifier diode array.