HN2S02JE(TE85L,F) datasheet pdf and Diodes - Rectifiers - Arrays product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
HN2S02JE(TE85L,F) Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-553
Packaging
Cut Tape (CT)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Subcategory
Other Diodes
Max Power Dissipation
100mW
Element Configuration
Dual
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Schottky
Current - Reverse Leakage @ Vr
5μA @ 40V
Voltage - Forward (Vf) (Max) @ If
600mV @ 100mA
Forward Current
100mA
Operating Temperature - Junction
125°C Max
Max Reverse Voltage (DC)
40V
Average Rectified Current
100mA
Max Repetitive Reverse Voltage (Vrrm)
45V
Diode Configuration
2 Independent
Reverse Current-Max
5μA
Max Forward Surge Current (Ifsm)
1A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.426419
$0.426419
10
$0.402282
$4.02282
100
$0.379511
$37.9511
500
$0.358029
$179.0145
1000
$0.337764
$337.764
HN2S02JE(TE85L,F) Product Details
HN2S02JE(TE85L,F) Overview
The forward voltage should be monitored and never exceed 5μA.This device will operate when the forward voltage is set to 100mA.100mW heat is generated at the highest rate from this electronic or electrical device (energy waste).
HN2S02JE(TE85L,F) Features
a forward voltage of 5μA a forward voltage of 5μA
HN2S02JE(TE85L,F) Applications
There are a lot of Toshiba Semiconductor and Storage HN2S02JE(TE85L,F) applications of rectifier diode array.