HN3A51F(TE85L,F)

new-10%

Manufacturer part number:HN3A51F(TE85L,F)

Manufacturer:Toshiba Semiconductor and Storage

Description:Trans GP BJT PNP 120V 0.1A 6-Pin SM T/R

Case Package:SOT-23

Datasheet:HN3A51F(TE85L,F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Number of Pins	6
Supplier Device Package	SM6
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	300mW
Frequency	100MHz
Number of Elements	2
Polarity	PNP
Element Configuration	Dual
Power Dissipation	300mW
Power - Max	300mW
Gain Bandwidth Product	100MHz
Transistor Type	2 PNP (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA 6V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage	120V
Voltage - Collector Emitter Breakdown (Max)	120V
Current - Collector (Ic) (Max)	100mA
Collector Emitter Saturation Voltage	-300mV
Max Breakdown Voltage	120V
Frequency - Transition	100MHz
Collector Base Voltage (VCBO)	-120V
Emitter Base Voltage (VEBO)	-5V
hFE Min	200
Radiation Hardening	No
RoHS Status	RoHS Compliant