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HN3C10FUTE85LF

  • HN3C10FUTE85LF
  • HN3C10FUTE85LF

HN3C10FUTE85LF

HN3C10FUTE85LF

Toshiba Semiconductor and Storage

Bipolar Transistors - BJT Transistor Lo Freq Small-Signal Amp

SOT-23

HN3C10FUTE85LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Packaging Cut Tape (CT)
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Power - Max 200mW
Transistor Type 2 NPN (Dual)
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA 10V
Collector Emitter Breakdown Voltage 12V
Gain 11.5dB
Max Breakdown Voltage 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.335138 $2.335138
10 $2.202960 $22.0296
100 $2.078264 $207.8264
500 $1.960627 $980.3135
1000 $1.849648 $1849.648

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