HN4B04J(TE85L,F)

new-10%

Manufacturer part number:HN4B04J(TE85L,F)

Manufacturer:Toshiba Semiconductor and Storage

Description:Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A

Case Package:SOT-23

Datasheet:HN4B04J(TE85L,F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-74A, SOT-753
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2014
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	300mW
Polarity	NPN, PNP
Element Configuration	Dual
Power - Max	300mW
Gain Bandwidth Product	300MHz
Transistor Type	NPN, PNP
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 100mA 1V
Current - Collector Cutoff (Max)	100μA ICBO
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage	30V
Collector Emitter Saturation Voltage	100mV
Max Breakdown Voltage	30V
Frequency - Transition	200MHz
Collector Base Voltage (VCBO)	35V
Emitter Base Voltage (VEBO)	5V
hFE Min	70
RoHS Status	RoHS Compliant