HN4C51J(TE85L,F)

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HN4C51J(TE85L,F)

Manufacturer part number:HN4C51J(TE85L,F)

Manufacturer:Toshiba Semiconductor and Storage

Description:HN4C51J(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:HN4C51J(TE85L,F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-74A, SOT-753
Number of Pins	5
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	300mW
Polarity	NPN
Element Configuration	Dual
Power - Max	300mW
Gain Bandwidth Product	100MHz
Transistor Type	2 NPN (Dual) Common Base
Collector Emitter Voltage (VCEO)	120V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA 6V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage	120V
Collector Emitter Saturation Voltage	300mV
Max Breakdown Voltage	120V
Collector Base Voltage (VCBO)	120V
Emitter Base Voltage (VEBO)	5V
hFE Min	200
Radiation Hardening	No
RoHS Status	RoHS Compliant