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JDH2S01FSTPL3

JDH2S01FSTPL3

JDH2S01FSTPL3

Toshiba Semiconductor and Storage

JDH2S01FSTPL3 datasheet pdf and Diodes - RF product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

JDH2S01FSTPL3 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case 2-SMD, Flat Lead
Number of Pins 2
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.10.00.70
Subcategory Rectifier Diodes
Number of Elements 1
Max Current Rating 25mA
Element Configuration Single
Diode Type Schottky - Single
Forward Current 25mA
Forward Voltage 250mV
Max Repetitive Reverse Voltage (Vrrm) 4V
Rep Pk Reverse Voltage-Max 4V
Capacitance @ Vr, F 0.6pF @ 0.2V 1MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
JDH2S01FSTPL3 Product Details

JDH2S01FSTPL3 Overview


RF diode is recommended to keep the forward voltage of the system above 250mV.

JDH2S01FSTPL3 Features



JDH2S01FSTPL3 Applications


There are a lot of Toshiba Semiconductor and Storage JDH2S01FSTPL3 applications of RF diodes.

  • Ultra high-speed switching
  • RF detector
  • Set-top boxes, digital media players
  • Surface-mount band-switching circuits
  • Laptop and desktop PCs
  • Series diode for mobile communication transmit/receive switch
  • Phase detection
  • Set top boxes
  • Low diode capacitance
  • Radar systems for industrial use

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