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JDV2S09FSTPL3

  • JDV2S09FSTPL3
  • JDV2S09FSTPL3

JDV2S09FSTPL3

JDV2S09FSTPL3

Toshiba Semiconductor and Storage

JDV2S09FSTPL3 datasheet pdf and Diodes - RF product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

JDV2S09FSTPL3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case 2-SMD, Flat Lead
Number of Pins 2
Supplier Device Package fSC
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Capacitance 11.1pF
Element Configuration Single
Diode Type Standard - Single
Capacitance @ Vr, F 11.1pF @ 1V 1MHz
Voltage - Peak Reverse (Max) 10V
Reverse Voltage (DC) 10V
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.232983 $5.232983
10 $4.936776 $49.36776
100 $4.657337 $465.7337
500 $4.393714 $2196.857
1000 $4.145013 $4145.013
JDV2S09FSTPL3 Product Details

JDV2S09FSTPL3 Overview


This device operates at a maximum reverse voltage of 10V based on the applicable device specifications.This is 11.1pF in terms of capacitance.

JDV2S09FSTPL3 Features


11.1pF capacitance

JDV2S09FSTPL3 Applications


There are a lot of Toshiba Semiconductor and Storage JDV2S09FSTPL3 applications of RF diodes.

  • RF voltage doubler
  • (SAT) TV
  • Series diode for mobile communication transmit/receive switch
  • RF attenuators
  • Smart metering
  • Compensators
  • Car radio
  • Radar systems for industrial use
  • Phase detection
  • Surface-mount band-switching circuits

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