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MT3S111(TE85L,F)

MT3S111(TE85L,F)

MT3S111(TE85L,F)

Toshiba Semiconductor and Storage

Trans GP BJT NPN 6V 0.1A 3-Pin S-Mini T/R

SOT-23

MT3S111(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Configuration Single
Power - Max 700mW
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA 5V
Gain 12dB
Voltage - Collector Emitter Breakdown (Max) 6V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 9000MHz
Frequency - Transition 11.5GHz
Power Dissipation-Max (Abs) 0.7W
Noise Figure (dB Typ @ f) 1.2dB @ 1GHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.24780 $0.7434
6,000 $0.23541 $1.41246
15,000 $0.22568 $3.3852
30,000 $0.21948 $6.5844

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