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MT3S111P(TE12L,F)

MT3S111P(TE12L,F)

MT3S111P(TE12L,F)

Toshiba Semiconductor and Storage

RF TRANS NPN 6V 8GHZ PW-MINI

SOT-23

MT3S111P(TE12L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Configuration Single
Power - Max 1W
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA 5V
Gain 10.5dB
Voltage - Collector Emitter Breakdown (Max) 6V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 6000MHz
Frequency - Transition 8GHz
Power Dissipation-Max (Abs) 0.3W
Noise Figure (dB Typ @ f) 1.25dB @ 1GHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.38250 $0.3825
2,000 $0.35700 $0.714
5,000 $0.33915 $1.69575
10,000 $0.32513 $3.2513
25,000 $0.31620 $7.905

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