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MT3S111TU,LF

MT3S111TU,LF

MT3S111TU,LF

Toshiba Semiconductor and Storage

RF SIGE NPN BIPOLAR TRANSISTOR N

SOT-23

MT3S111TU,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 800mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA 5V
Gain 12.5dB
Voltage - Collector Emitter Breakdown (Max) 6V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 10GHz
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.58000 $0.58
500 $0.5742 $287.1
1000 $0.5684 $568.4
1500 $0.5626 $843.9
2000 $0.5568 $1113.6
2500 $0.551 $1377.5

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