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RFM03U3CT(TE12L)

  • RFM03U3CT(TE12L)
  • RFM03U3CT(TE12L)

RFM03U3CT(TE12L)

RFM03U3CT(TE12L)

Toshiba Semiconductor and Storage

MOSFET N-CH RF-CST3

SOT-23

RFM03U3CT(TE12L) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case 2-SMD, No Lead Exposed Pad
Supplier Device Package RF-CST3
Packaging Cut Tape (CT)
Published 2009
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated 16V
Current Rating (Amps) 3A
Max Power Dissipation 7W
Current Rating 3A
Frequency 520MHz
Current - Test 500mA
Drain to Source Voltage (Vdss) 16V
Transistor Type N-Channel
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 3V
Gain 14.8dB
Power - Output 3W
Voltage - Test 3.6V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.133680 $5.13368
10 $4.843094 $48.43094
100 $4.568957 $456.8957
500 $4.310337 $2155.1685
1000 $4.066355 $4066.355

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