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RN1101MFV,L3F

RN1101MFV,L3F

RN1101MFV,L3F

Toshiba Semiconductor and Storage

RN1101MFV,L3F datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

RN1101MFV,L3F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case SOT-723
Packaging Tape & Reel (TR)
Published 2017
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code unknown
Power - Max 150mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 4.7 k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.030077 $0.030077
500 $0.022116 $11.058
1000 $0.018430 $18.43
2000 $0.016908 $33.816
5000 $0.015802 $79.01
10000 $0.014699 $146.99
15000 $0.014216 $213.24
50000 $0.013979 $698.95

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