RN1101MFV,L3F(CT

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RN1101MFV,L3F(CT

Manufacturer part number:RN1101MFV,L3F(CT

Manufacturer:Toshiba Semiconductor and Storage

Description:RN1101MFV,L3F(CT datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN1101MFV,L3F(CT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-723
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	150mW
Transistor Type	NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 500μA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Resistor - Base (R1)	4.7 k Ω
Resistor - Emitter Base (R2)	4.7 k Ω