RN1102MFV,L3F

new-10%

Manufacturer part number:RN1102MFV,L3F

Manufacturer:Toshiba Semiconductor and Storage

Description:Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Case Package:SOT-23

Datasheet:RN1102MFV,L3F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-723
Packaging	Tape & Reel (TR)
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	150mW
Polarity	NPN
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 500μA, 5mA
Collector Emitter Breakdown Voltage	50V
Max Breakdown Voltage	50V
Emitter Base Voltage (VEBO)	10V
hFE Min	30
Resistor - Base (R1)	10 k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	10 k Ω
RoHS Status	RoHS Compliant