RN1102T5LFT

new-10%

RN1102T5LFT

Manufacturer part number:RN1102T5LFT

Manufacturer:Toshiba Semiconductor and Storage

Description:RN1102T5LFT datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN1102T5LFT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Number of Pins	3
Supplier Device Package	SSM
Packaging	Tape & Reel (TR)
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	100mW
Base Part Number	RN110*
Polarity	NPN
Element Configuration	Single
Power - Max	100mW
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Radiation Hardening	No
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$0.030336	$0.030336
500	$0.022305	$11.1525
1000	$0.018588	$18.588
2000	$0.017053	$34.106
5000	$0.015937	$79.685
10000	$0.014826	$148.26
15000	$0.014338	$215.07
50000	$0.014098	$704.9