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RN1103MFV,L3F

  • RN1103MFV,L3F
  • RN1103MFV,L3F

RN1103MFV,L3F

RN1103MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 150MW VESM

SOT-23

RN1103MFV,L3F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150mW
Power - Max 150mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Resistor - Base (R1) 22 k Ω
Resistor - Emitter Base (R2) 22 k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.555608 $0.555608
10 $0.524159 $5.24159
100 $0.494489 $49.4489
500 $0.466499 $233.2495
1000 $0.440094 $440.094

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