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RN1106MFV,L3F(CT

RN1106MFV,L3F(CT

RN1106MFV,L3F(CT

Toshiba Semiconductor and Storage

RN1106MFV,L3F(CT datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

RN1106MFV,L3F(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case SOT-723
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 150mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.18000 $0.18
500 $0.1782 $89.1
1000 $0.1764 $176.4
1500 $0.1746 $261.9
2000 $0.1728 $345.6
2500 $0.171 $427.5
RN1106MFV,L3F(CT Product Details

RN1106MFV,L3F(CT Applications

Ultra-small package, suited to very high-density mounting

Incorporating a bias resistor into the transistor reduces the number of parts,

so enabling the manufacture of ever more compact equipment and lowering

assembly cost.

A wide range of resistor values is available for use in various circuits.

Complementary to the RN2101MFV to RN2106MFV


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