RN1106MFV(TL3,T)

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RN1106MFV(TL3,T)

Manufacturer part number:RN1106MFV(TL3,T)

Manufacturer:Toshiba Semiconductor and Storage

Description:RN1106MFV(TL3,T) datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN1106MFV(TL3,T) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-723
Number of Pins	3
Packaging	Cut Tape (CT)
Published	2011
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	150mW
Polarity	NPN
Element Configuration	Single
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 500μA, 5mA
Collector Emitter Breakdown Voltage	50V
Max Breakdown Voltage	50V
Emitter Base Voltage (VEBO)	5V
hFE Min	80
Resistor - Base (R1)	4.7 k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	47 k Ω
RoHS Status	RoHS Compliant