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RN1108,LF(CT

RN1108,LF(CT

RN1108,LF(CT

Toshiba Semiconductor and Storage

RN1108,LF(CT datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

RN1108,LF(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 100mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 22 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.197744 $0.197744
10 $0.186551 $1.86551
100 $0.175991 $17.5991
500 $0.166030 $83.015
1000 $0.156632 $156.632

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