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RN1109MFV,L3F

  • RN1109MFV,L3F
  • RN1109MFV,L3F

RN1109MFV,L3F

RN1109MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

SOT-23

RN1109MFV,L3F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VESM
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 150mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 22 kOhms
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.240944 $0.240944
10 $0.227307 $2.27307
100 $0.214440 $21.444
500 $0.202302 $101.151
1000 $0.190851 $190.851

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