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RN1110ACT(TPL3)

  • RN1110ACT(TPL3)
  • RN1110ACT(TPL3)

RN1110ACT(TPL3)

RN1110ACT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

SOT-23

RN1110ACT(TPL3) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Power - Max 100mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 150mV
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 150mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Resistor - Base (R1) 47 k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.400214 $0.400214
10 $0.377560 $3.7756
100 $0.356189 $35.6189
500 $0.336027 $168.0135
1000 $0.317007 $317.007

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