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RN1114,LF

RN1114,LF

RN1114,LF

Toshiba Semiconductor and Storage

RN1114,LF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

RN1114,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 100mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 1 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.21000 $0.21
500 $0.2079 $103.95
1000 $0.2058 $205.8
1500 $0.2037 $305.55
2000 $0.2016 $403.2
2500 $0.1995 $498.75

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