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RN1116(TE85L,F)

RN1116(TE85L,F)

RN1116(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

SOT-23

RN1116(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 1999
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signals
Max Power Dissipation 100mW
Number of Elements 1
Power - Max 100mW
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.785758 $6.785758
10 $6.401659 $64.01659
100 $6.039300 $603.93
500 $5.697453 $2848.7265
1000 $5.374956 $5374.956

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