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RN1117(TE85L,F)

RN1117(TE85L,F)

RN1117(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

SOT-23

RN1117(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signals
Number of Elements 1
Power - Max 100mW
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Power Dissipation-Max (Abs) 0.1W
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 4.7 k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.386896 $0.386896
10 $0.364997 $3.64997
100 $0.344337 $34.4337
500 $0.324846 $162.423
1000 $0.306459 $306.459

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