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RN1118MFV,L3F

RN1118MFV,L3F

RN1118MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

SOT-23

RN1118MFV,L3F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SOT-723
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Power - Max 150mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 47 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
8,000 $0.02898 $0.23184

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