RN1131MFV(TL3,T)

new-10%

Manufacturer part number:RN1131MFV(TL3,T)

Manufacturer:Toshiba Semiconductor and Storage

Description:Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO

Case Package:SOT-23

Datasheet:RN1131MFV(TL3,T) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-723
Packaging	Cut Tape (CT)
Published	2008
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	150mW
Reach Compliance Code	unknown
Polarity	NPN
Element Configuration	Single
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 500μA, 5mA
Collector Emitter Breakdown Voltage	50V
Max Breakdown Voltage	50V
Emitter Base Voltage (VEBO)	5V
hFE Min	120
Resistor - Base (R1)	100 k Ω
Continuous Collector Current	100mA
RoHS Status	RoHS Compliant