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RN1301,LF

RN1301,LF

RN1301,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

SOT-23

RN1301,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Base Part Number RN130*
Power - Max 100mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 4.7 k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03213 $0.09639
6,000 $0.02898 $0.17388
15,000 $0.02520 $0.378
30,000 $0.02268 $0.6804
75,000 $0.02016 $1.512
150,000 $0.01680 $2.52

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