RN1303(TE85L,F)

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RN1303(TE85L,F)

Manufacturer part number:RN1303(TE85L,F)

Manufacturer:Toshiba Semiconductor and Storage

Description:RN1303(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN1303(TE85L,F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Transistor Element Material	SILICON
Packaging	Cut Tape (CT)
Published	2014
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	100mW
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	100mW
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
hFE Min	70
Resistor - Base (R1)	22 k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	22 k Ω
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free