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RN1306,LF

RN1306,LF

RN1306,LF

Toshiba Semiconductor and Storage

Trans GP BJT NPN 50V 0.1A 3-Pin USM Embossed T/R

SOT-23

RN1306,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 28.009329mg
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 100mW
Polarity NPN
Element Configuration Single
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 80
Resistor - Base (R1) 4.7 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47 k Ω
Height 900μm
Length 2mm
Width 1.25mm
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.074821 $0.074821
500 $0.055015 $27.5075
1000 $0.045846 $45.846
2000 $0.042061 $84.122
5000 $0.039309 $196.545
10000 $0.036566 $365.66
15000 $0.035364 $530.46
50000 $0.034773 $1738.65

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