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RN1313(TE85L,F)

RN1313(TE85L,F)

RN1313(TE85L,F)

Toshiba Semiconductor and Storage

Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R

SOT-23

RN1313(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Max Power Dissipation 150mW
Base Part Number RN131*
Polarity NPN
Element Configuration Single
Power Dissipation 100mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
hFE Min 120
Resistor - Base (R1) 47 k Ω
Continuous Collector Current 100mA
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.740630 $6.74063
10 $6.359085 $63.59085
100 $5.999137 $599.9137
500 $5.659563 $2829.7815
1000 $5.339210 $5339.21

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