RN1404S,LF

new-10%

Manufacturer part number:RN1404S,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:Bipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 200mW 4.7k

Case Package:SOT-23

Datasheet:RN1404S,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	59
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation	200mW
Terminal Position	DUAL
Terminal Form	GULL WING
Base Part Number	RN140*
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Polarity	NPN
Configuration	SINGLE WITH BUILT-IN RESISTOR
Power Dissipation	200mW
Transistor Application	SWITCHING
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	250MHz
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Resistor - Base (R1)	47 k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	47 k Ω
RoHS Status	RoHS Compliant