RN1406S,LF(D

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RN1406S,LF(D

Manufacturer part number:RN1406S,LF(D

Manufacturer:Toshiba Semiconductor and Storage

Description:RN1406S,LF(D datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN1406S,LF(D Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2014
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	BUILT IN BIAS RESISTANCE RATIO IS 10
Max Power Dissipation	200mW
Terminal Position	DUAL
Terminal Form	GULL WING
Reach Compliance Code	unknown
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN RESISTOR
Power - Max	200mW
Transistor Application	SWITCHING
Polarity/Channel Type	NPN
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	250MHz
Frequency - Transition	250MHz
Resistor - Base (R1)	4.7 k Ω
Resistor - Emitter Base (R2)	47 k Ω
RoHS Status	RoHS Compliant