RN1409,LF

new-10%

Manufacturer part number:RN1409,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Case Package:SOT-23

Datasheet:RN1409,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini
Packaging	Cut Tape (CT)
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	200mW
Polarity	NPN
Power - Max	200mW
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Frequency - Transition	250MHz
Emitter Base Voltage (VEBO)	15V
hFE Min	70
Resistor - Base (R1)	47 kOhms
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	22 kOhms
RoHS Status	RoHS Compliant