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RN1411,LF

RN1411,LF

RN1411,LF

Toshiba Semiconductor and Storage

RN1411,LF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

RN1411,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 10 k Ω
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.057390 $0.05739
500 $0.042199 $21.0995
1000 $0.035166 $35.166
2000 $0.032262 $64.524
5000 $0.030151 $150.755
10000 $0.028048 $280.48
15000 $0.027125 $406.875
50000 $0.026672 $1333.6

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