RN1412TE85LF

new-10%

Manufacturer part number:RN1412TE85LF

Manufacturer:Toshiba Semiconductor and Storage

Description:Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO

Case Package:SOT-23

Datasheet:RN1412TE85LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	Cut Tape (CT)
Published	2014
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	200mW
Reach Compliance Code	unknown
Polarity	NPN
Element Configuration	Single
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Emitter Base Voltage (VEBO)	5V
hFE Min	120
Resistor - Base (R1)	22 k Ω
Continuous Collector Current	100mA
RoHS Status	RoHS Compliant